Quan Niu

 Dr. Quan Niu received her Bachelor degree in Chemistry from Shandong University, China, and her Master degree in Materials Science from Technical University of Munich, Germany. In the period of 2011-2013, she worked as a researcher in Global Research Center of Lenovo (China), University of Stuttgart (Germany) and RWTH University Aachen (Germany), respectively. Starting in 2013, she joined the Max Planck Institute for Polymer Research, Germany to pursue a Ph.D. degree under the supervision of Prof. Paul W. M. Blom. She received her Ph.D. degree in Chemistry in 2017 and continuously works as a research scientist at the Max Planck Institute for Polymer Research since then. Quan’s research lies in the field of organic semiconductors and device physics. Her main research focuses on resolving the intrinsic degradation mechanism of polymer light-emitting diodes (PLEDs) which have puzzled the industry and academic communities for decades. Her research has realized that PLEDs degradation is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. She also developed techniques to characterize and suppress PLEDs degradation. Her research has been published on many prestigious scientific journals such as Nature Materials and Physical Review Letters. She has also been authorized 5 US patents and 8 Chinese patents. One of her works appeared on Physical Review Letters, which exploit the negative capacitance phenomena to non-destructively characterize the trap density in organic semiconductors, has been recommended as editor’s suggestion paper.

上一篇Yang Xi
下一篇Armin Wedel