Yasufumi Fujiwara

Yasufumi Fujiwara earned his Doctor degree in Electrical Engineering from Osaka University in 1986. He was an Assistant Professor (1985-1991) and a Lecturer (1991-1993) of Osaka University, and an Associate Professor of Nagoya University (1993-2003). He also worked as a Visiting Associate Professor of the University of Illinois at Urbana-Champaign in USA (1995-1996). He is presently a Full Professor at the Department of Materials Science and Engineering at Osaka University in Japan, where he has been since 2003. His scientific interests include atomic-level controlled growth of III-V semiconductors by means of organometallic vapor phase epitaxy, material science of electronic materials, and rare-earth-doped photonic devices. Recently, he developed bright red light-emitting diodes (LEDs) with Eu-doped GaN, using artificially-controlled energy-transfer from the host to Eu ions. His research has resulted in over 270 publications including 6 Nature publications and over 390 international conference and invited presentations. He has received numerous awards and prizes for his work; the Academic Prize of The NAGAI Foundation for Science and Technology in 1992, the Excellent Award for “Koto Business Compe in Himeji” from The Himeji Chamber of Commerce and Industry in 1994, and the Best Paper Awards from The Japan Society of Applied Physics (JSAP) in 2010 and from The Laser Society of Japan in 2015. He is a Fellow of JSAP from 2017.