Albert Chin

Albert Chin received the Ph.D. degree in electrical engineering from the University of Michigan. He was with AT&T Bell Labs, General Electric Electronic-Lab, Texas Instruments SPDC, and visiting professor at National University of Singapore. He is a Chair Professor of National Chiao Tung University. He is a pioneer on low DC-power high-κ CMOS and high-κ Flash memory, low dynamic-switching-power 3D IC, high RF-power asymmetric MOSFET, Si THz devices, and resonant-cavity photo-detector. He has co-authored >500 papers, four “Top 100 Scientific Reports Physics papers” in 2017~2020, one “Top Articles in Device Physics of Applied Physics Letters”, cover story for Nanomaterials, and 7 Highly Cited Papers. His paper citation h-index is 56, the top tiers researcher among Electrical & Electronics Engineering fields in Taiwan. He is The World's Top 2% Scientists, Elsevier. Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of International Electron Devices Meeting (IEDM) Executive Committee, IEEE Electron Device Letters Editor, IEEE ED Society SRC Chair, and two Technical Committee Chairs on “Electronic Materials” and “Compound Semiconductor Devices & Circuits”. He is an IEEE Fellow, The Optical Society Fellow, Intl Assn Advanced Materials Fellow and Asia-Pacific Academy of Materials Academician.