Sunbin Deng

Dr. Sunbin Deng receivedhis B.S. degree in optical information science and technology from Huazhong University of Science and Technology (HUST), Wuhan, China in 2014 and Ph.D.degree (supervisor: Prof. Hoi-Sing Kwok) in electronic and computer engineering from Hong Kong University of Science and Technology (HKUST), Hong Kong in 2020.He is a presently postdoctoral research associate (supported by Research TalenHub of Hong Kong Innovation and Technology Fund) in the State Key Laboratory ofAdvanced Displays and Optoelectronics Technologies, HKUST. His current researchis focused on metal oxide thin-film transistors technologies for information displays and sensor interfaces, the development of ultra-high-resolution shadow masksfor OLED displays, and the application of strongly correlated oxide devices toneuromorphic computing.

Sunbin has co-authoredover 30 papers (including 11 first-authored papers papers) in prestigious peer-reviewed journals. He has also written 1 book chapter and applied for 8 patents. He wasa recipient of Distinguished Paper Award at International Display Manufacturing Conference (IDMC) in 2015 and 2017, Best Presentation Award in PostgraduateWorkshop on Display Research in 2016 and 2018, and Distinguished Paper Award atSID Display Week 2021.

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Hybrid-Phase Metal Oxide Thin-Film TransistorTechnology

With the advance of display technologies, technical standards of thin-film transistors (TFTs) in active-matrix backplanes become increasinglyhigher. This talk will briefly introduce my efforts on continuing performance improvement of metal oxide (MO) TFTs via material, device and processing innovations.Initially, hybrid-phase indium-tin-zinc oxide(hp-ITZO) thin films were designed by modifying both element composition and crystal morphology. Their electron Hall mobility could surpass the theoretical upper limit of the amorphous counterparts. Afterwards, hp-ITZO TFTs withvarious structures were developed. For example, through gate insulator (GI)engineering and gate electrode (GE) engineering, top-gate bottom-contact deviceswith all-oxide layers and vertical devices with a sub-micron channel length were fabricated for energy-efficient transparent electronics and high-resolution displays, respectively. These devices employed a type of PECVD SiO₂stacks as high-quality GIs and utilized the gas permeability of GEs as an effective tool to modulate their threshold voltage. By adopting a rational PECVD SiO₂combination together with a differentiated annealing strategy, self-aligned TFTs with good electrical characteristics and robust stability were realized. By employing a useful fluorination method, bottom-gate etch-stopper TFTs that werefree of additional thermal annealing treatments were also reported for thecost-effective manufacturing of display panels.Finally, the hp-MO TFT technology was transferred to several practical applications. A 2.2-inch AMOLED display prototype, fully transparent low-voltage digital circuits, and high-gain low-noise amplifiers have been successfully demonstrated.