Qun Zhang

Prof. Qun Zhang is a professor at Department of Materials Science of Fudan University. After a Bachelor' degree in Physical Electronics from Fudan University he received his M.S. degrees and PhD in Physical Electronics from the Tokyo Institute of Technology. His research field has been conducted in areas such as high mobility oxide semiconductor materials and high performance thin film transistor devices, improvement of stability and reliability, development of new oxide semiconductor material, device structure and vacuum process of oxide TFTs. He has published over 140 articles in international peer-reviewed scientific journals.

Fundamental and Recent Progress in Oxide-TFT Research & Development

The course introduces the functional materials, device structure, basic working principles, electrical structure characteristics, and electrical stability of thin-film transistors. It put the emphasis on the development history of oxide thin-film transistors, the conduction mechanism of the channel layer, electronic structure characteristics, channel layer material design theory, device design principles, ion doping, high mobility, electrical stability, size effects, and other basic concepts. It also focuses on the vacuum manufacturing processes such as PVD, CVD, and ALD used in the fabrication of oxide TFT devices and their influencing factors. The course reviews the research and development progress of oxide TFTs in terms of channel layer materials, device structures, fabrication processes, and driving circuits.