Bin Liu

Personal Introduction

Professor Bin Liu received his BS degreein Physics from Sun Yat-Sen University and his Ph. D. degree inMicroelectronics from Nanjing University in 2008. In 2009, he was at the Departmentof Electronic Engineering at Chinese University of Hongkong as a visitingscholar. During the period of 2012-2014, he was a research associate in theUniversity of Sheffield, EPSRC National III-V Centre, United Kingdom. He alsovisited Yale University in US and KTH in Sweden for collaborative research. Nowhe is working at the School of Electronics Science and Engineering, Nanjing University.He was awarded the Excellent Young Scientist by NSFC in 2014, Young ChangjiangScholar in 2016, and Changjiang Distinguished Professor in 2021. Currently, hisresearch areas include metal–organic chemical vapor deposition(MOCVD) andmolecular beam epitaxy(MBE) growth of III-nitride semiconductor materials, andfabrication of optoelectronic devices such as Micro-LEDs, UV-LEDs, and UVphotodetectors. So far, he has published over 200 SCI-indexed refereed papers,which has been widely cited and highlighted. And he also holds more than 60patents.

Speech Introduction

Gallium nitride (GaN) based semiconductors andMicro-LED chips, which have attracted great attentions from academic andindustrial communities. It is due to their applications in large area highresolution TV display, wearable consumerelectronics, automotive display, VR/AR virtual enhanced display and so on.At present, Micro-LED display technology still faces some main scientific andtechnical problems, such as the accuracy of mass transfer process, the lack ofefficient red-light sources and the efficiency droop of LED chips so on.

In order to research and solve above problems,firstly, the lateral epitaxy growth of GaN thin films and multiple quantumwell(MQW) structures on micro/nano-patterning substrates were employed byMOCVD. And high crystalline quality materials and weak polarization InGaN/GaNMQWs were realized. We could achieve high efficiency and low droop effectnitride-based Micro-LED devices, even for amber/red emission with wavelength upto 630nm. Secondly, hybrid micro/nano-structured light-emitting diode (LED)integrated with III-nitride/quantum dots(QDs) has been developed. The LEDs werefabricated into micro/nano-holes by soft nanoimprint lithography technique.Based on above hybrid devices, we fabricated RGB Micro-LED array with period of20μm*30μm. On the other hand, we realized 3D monolithic ultra-high-resolutionMicro-LED displays driven by large-area CVD MoS2 thin-filmtransistors(TFTs). The individual TFT-LED (1T-1D) cell delivered low operatingvoltage and high luminance of 7.1×107 cd/m2, whichsatisfies various display applications to the high resolution and brightnesslimit. The prototypical 32×32 active-matrix (AM) displays at 1270 PPIresolution were further demonstrated. In summary, the achieved materials anddevices could give a promising way for comprehensive applications ofhigh-resolution full-color display, transparent display, visible lightcommunication and so on.