Degang Zhao (赵德刚)

Professor Degang Zhao is mainly engaged in investigating GaN-based optoelectronic materials and devices, and has got many research achievements in the material growth and device fabrication. He has studied the mechanism and effect of low-temperature buffer layer on the GaN epitaxial layer growth, and high quality GaN epilayers with room temperature carrier mobility higher than 1000 cm2/Vs have been grown on sapphire substrate, the result is the highest-reported electron mobility of single-layer GaN grown by metalorganic chemical vapor deposition. After that, not only GaN-based blue laser diodes with high power and long lifetime are realized, but also GaN-based ultraviolet laser diodes are demonstrated firstly in China. He won the National Natural Science Foundation for Distinguished Young Scholars in 2009, won the National Award for Youth in Science and Technology of China in 2011. He has authored or co-authored over 300 articles in refereed journals and more than 40 patents.